| 摘要 |
The invention calls for an emitter (14), base (6) and collector (15) to be disposed in a vertical sequence in such a way in an epitaxial layer (3) deposited on a substrate (1) that the emitter (14) adjoins the surface of the epitaxial layer. The emitter (14) and base (6) are delimited at each side by an insulating zone (4, 8). The base (6) has a region (61), at the edges adjacent to the insulating zone, which is more highly doped than the rest of the base (6). This base edge region (61) is preferably produced by diffusion from boron silicate glass spacers (8) located above it. |
