| 摘要 |
<p>The field of the invention is making bonding bumps (22) on the pad areas (12) of a substrate (10). The technical problem is the time-consuming conventional processes for making thick (1-20 micron) bumps (22). The invention's solution is depositing the bumps (22) by localized metal cluster ion deposition. One embodiment includes depositing a layer (18a) of metallic adhesion material over a surface on substrate (10a), depositing metallic bumps (40) on the metallic adhesion material over each of the pad areas (12a) using a focused liquid metal ion source (20), and chemically etching the layer (18a) of metallic adhesion material off the surface outside of the deposited bumps (40). The principal use of the invention is making bonding bumps on integrated circuit chips.</p> |
