发明名称 MEHRSCHICHTENSYSTEM FUER MAGNETORESISTIVE SENSOREN UND VERFAHREN ZU DESSEN HERSTELLUNG
摘要 The multi-layer system (2) with magneto-resistive properties disclosed has at least two thin ferromagnetic layers (3, 4) with, between them, a thin non-magnetic layer (5). The invention calls for the thickness (d) of this non-magnetic intermediate layer (5) to have a pre-determined value which is dependent on a discrete transition between ferromagnetic behaviour and anti-ferromagnetic behaviour of the multi-layer structure (2). The thickness (d) of the non-magnetic intermediate layer can be conveniently defined by observing the domain pattern as a function of the layer thickness (d), making use of the magneto-optic Kerr effect.
申请公布号 DE4104951(A1) 申请公布日期 1992.08.20
申请号 DE19914104951 申请日期 1991.02.18
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 HUBERT, ALEX, PROF. DR., 8520 ERLANGEN, DE;GRUENBERG, PETER, DR., 5170 JUELICH, DE;SCHEWE, HERBERT, DR., 8522 HERZOGENAURACH, DE
分类号 G01R33/06;G01R33/09;H01F10/08;H01F10/26;H01F10/32;H01L43/08 主分类号 G01R33/06
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