MEHRSCHICHTENSYSTEM FUER MAGNETORESISTIVE SENSOREN UND VERFAHREN ZU DESSEN HERSTELLUNG
摘要
The multi-layer system (2) with magneto-resistive properties disclosed has at least two thin ferromagnetic layers (3, 4) with, between them, a thin non-magnetic layer (5). The invention calls for the thickness (d) of this non-magnetic intermediate layer (5) to have a pre-determined value which is dependent on a discrete transition between ferromagnetic behaviour and anti-ferromagnetic behaviour of the multi-layer structure (2). The thickness (d) of the non-magnetic intermediate layer can be conveniently defined by observing the domain pattern as a function of the layer thickness (d), making use of the magneto-optic Kerr effect.
申请公布号
DE4104951(A1)
申请公布日期
1992.08.20
申请号
DE19914104951
申请日期
1991.02.18
申请人
SIEMENS AG, 8000 MUENCHEN, DE
发明人
HUBERT, ALEX, PROF. DR., 8520 ERLANGEN, DE;GRUENBERG, PETER, DR., 5170 JUELICH, DE;SCHEWE, HERBERT, DR., 8522 HERZOGENAURACH, DE