| 摘要 |
<p>In an npn silicon bipolar transistor, a hole (109) is formed only in that portion of an n-type epitaxial layer (103) formed on an n<+>-type buried layer (102) where an n<+>-type collector region (110) is to be formed, and this specific portion of the n-type epitaxial layer is made thinner. A p-type base region (111) and n<+>-type emitter region (112) are then formed. The hole (409; Fig. 25) may be lined with an insulating film (413), and silicon grown in the hole and made n<+>-type to form the n<+>-type collector region (410). The resistance of the n<+>-type collector region can be lower without causing misfit dislocation in the n<+>-type collector region, thus providing a high-speed npn silicon bipolar transistor with a suppressed leak current. <IMAGE></p> |
