| 摘要 |
<p>A first interlayer dielectric film layer is formed on a semiconductor substrate (21). The first interlayer dielectric film (22) is made of a BPSG film formed by atmospheric pressure chemical vapour deposition method. First connection holes (24) are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer (23) is formed in a region including at leas the first connection holes. The first conductive film layer is composed of three layers by sequentially laminating a barrier metal film (23A), an aluminium alloy film (23B), and an anti-reflection film (23C). On the first conductive film layer formed in a specified pattern, a second interlayer dielectric film layer (26) is formed. The second interlayer dielectric film layer is composed of a lower layer (26A) of silicon oxide film, an intermediate layer (26B) of silicon oxide film made of inorganic silica or organic silica, and an upper layer (26C) of silicon oxide film. Specified portions of the second interlayer dielectric film layer are selectively removed. The removed regions become second connection holes (25). A second conductive film layer (27) is formed thereon. The second conductive film layer is composed of two layers: a refractory metal film (27A) as a lower layer and an aluminium alloy film (27B) as an upper layer. Thus, the second conductive film layer is not moved easily by the stress of the passivation film formed above. at the same time, formation of voids in the second connection holes is prevented, and increase of resistance of wiring is kept to a minimum. Hence, a semiconductor device with reduced reliability problems and a method for fabricating such a device are disclosed. <IMAGE></p> |
