| 摘要 |
<p>PURPOSE:To provide a semiconductor storage device having an excellent characteristic by reducing the fluctuation of the characteristics of memory cells in a cell array area. CONSTITUTION:Dummy element areas 13, 18, and 19 are provided in a wide field area secured for wiring contact, etc., at the end section of the field area outside a cell array area or in the cell array area so that all memory cells in the cell array area can be manufactured under the same condition.</p> |
