| 摘要 |
PURPOSE: To provide a method for manufacturing the multi-level coplanar conductor/insulator film on a machined semiconductor base with a conductor pattern. CONSTITUTION: A development stop layer is given to a 1st layer, and a 2nd layer formed of a photosensitive polyimide polymer composition is given to the development stop layer. The 2nd layer is exposed to an image so that part of the development stop layer is selectively exposed, and then developed, and the exposed part is removed. The 1st layer is exposed to an image, so that the region of the base is selectively exposed, and then developed (here, an opening part formed in the 1st layer is matched with at least part of an opening part formed in the 2nd layer). A conductor substance is deposited on the 2nd layer and in the openings in the 1st and 2nd layers, and the conductor substance laid on the 2nd layer is removed to form the surface of the conductor substance to be flush with the 2nd layer. |
