| 摘要 |
PURPOSE: To protect the internal wall of a plasma-etching chamber by providing a conductive coating for protection against chemical corrosion due to reaction gas on the internal metal surface of the chamber. CONSTITUTION: A conductive coating 42 is formed on the internal surface of a metallic chamber 22, i.e., a top plate 24 and a sidewall 26, the internal surface of a bottom plate 28, and the reverse surface of an anode plate 40. A term 'conductive coating' means a coating with conductivity of >=5000mhos/cm. The conductive coating 42 has a minimum coating thickness of at least approximately 0.2μm (2000Å). Consequently, those surfaces can be protected against chemical corrosion due to reactive gas flowing in the chamber 22, at the time of the plasma-etching of a wafer 10.
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