发明名称 DRIVING CIRCUIT FOR ELECTRIC FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To use a buffer inverter with comparatively low power and bipolar symmetrical output being an existing logic IC as the main circuit of a driving circuit. CONSTITUTION:The high level output of an emitter of an NPN transistor(TR) Q2 is inputted to the gate of an electric field effect TR Q5 via a diode D1 without a loss, a gate-source capacitance C2 is surely and quickly charged to turn on the electric field effect TR Q5. Moreover, when a PNP TR Q3 outputs a low level, a current based on the charge in the gate-source capacitance C2 of the electric field effect TR Q5 and a current via a gate-drain capacitance C1 flow in parallel with TRs Q3, Q4 and the gate potential of the field effect TR Q5 is controlled by a current being twice of the output current of the TR Q3.
申请公布号 JPH04230116(A) 申请公布日期 1992.08.19
申请号 JP19900418304 申请日期 1990.12.27
申请人 SANYO ELECTRIC CO LTD 发明人 OKAWA KATSUMI
分类号 H03K17/04;H03K17/56;H03K17/567 主分类号 H03K17/04
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