| 摘要 |
PURPOSE: To obtain a power semiconductor device for high-frequency operation by supporting at least one semiconductor element (die) and a die, and sealing part of a metal lead, which is electrically connected to the die with a resin. CONSTITUTION: A lead frame is a monolithic metal strip, coupled by a lateral beam part 22, and thin parts 28 and 30 are located on respective sides across a thick center projection part 24. An electronic element 46 is provided at the center part 16 on a top surface 36 above the projection part 24. Electronic elements 46 are coupled with center parts 16 on top surfaces 36 of individual lead frame units 12 by wire bonding or other connecting means 48. The electronic element 46 and wire bonds 48 and 50 are covered with, for example, a resin-made sealing body 52. The individual lead frame units 12 are formed into an 'H'-shape, and the external connection arm 20 of an 'H'-part is connected to a center area 16 for obtaining a low-impedance contact for a reference connection with an electric element. |
