| 摘要 |
PURPOSE: To manufacture a non-contact EPROM and/or a flash EPROM of ultra-high density (e.g. 64Mbits) on a silicon substrate. CONSTITUTION: In a gate oxide region 19, mutually isolated island members 27 are formed of a poly-2 layer 23, a dielectric layer 22, and a poly-1 layer 21. Each island member is related to one of the cells in an array and separated from the other members by a groove 26, extending to an electric field oxide region or substrate region. On the side where channel regions lie adjacent, mutually isolated, parallel, thin and long source and drain regions 30, 31, and 32 are formed by ion injection. Then the groove 26 is filled with an insulating material 35, and word lines 40 are prescribed in a pattern along the width of the array. Each word line provides an electric contact with a control gate member related to cells in one row in the array.
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