| 摘要 |
PURPOSE:To offer a semiconductor device, which is capable of applying simultaneously a voltage stress to the MOS transistors in the same line (or the same row) of a plurality of pieces of MOS transistors arranged in the form of matrix using a small number of inputs for voltage stress test use and is capable of improving a stress accelerating efficiency to a group of the MOS transistors. CONSTITUTION:A semiconductor device comprises a common wiring, which is connected in common to each one end (a drain or a source) or each gate of the MOS transistors in the same line or the same row of a plurality of pieces of MOS transistors arranged in the form of matrix, diodes which are connected the side of their respective one end to a common wiring in each line or each row of the MOS transistors, and a voltage applying means to apply a desired voltage simultaneously to all the common wirings or arbitrary common wirings more than the number of the common wirings to be selected at the time of normal operation by controlling a potential on the side of the other end of each diode of these diodes. |
