| 摘要 |
PURPOSE:To prevent the generation of static breakdown and shorten the manufacturing process of a container of semiconductor device by a method wherein a lead terminal is brazed to a conductive pattern on a semiconductor package surface, and thereafter a metallic film is adhered to the pattern and the terminal by electroless plating. CONSTITUTION:The lead terminal 27 is brazed to the conductive pattern 25 on the surface of the semiconductor package 21 calcined to a high temperature, and next the metallic film is adhered to the above-mentioned pattern and the terminal 27 by electroless plating. For example, processes from the calcination 11 of the ceramic substrate 21 to the lead brazing 13 are carried out by the same method as the conventional method. Then, electroless plating instead of the conventional method of electroplating is used in the Au plating process 16 after the Ni plating process 14 and the sintering process 15. This manner produces no plated terminal patterns on the side surface of the substrate and thus enables the prevention of static breakdown due to the contact of human bodies with its side surface at the time of handling during the process of assembly. Further, since plated terminal patterns are not provided to the side surface, processes of side- polishing and groove-cutting can be omitted. |
