| 摘要 |
A resist exposed to patterned radiation at 193 nm forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are readily removed by a oxygen RIE plasma. The laser exposure is a reciprocal process allowing precise control. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist.
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