发明名称 LITHOGRAPHY PROCESS
摘要 The lithography process method for improving the accuracy of super imposition comprises: applying first pattern materials (11) on a silicon substrate (10) to form a first patern on a chip (1); forming aligning marks on a cutting area (2) between the chips; applying second pattern materials (14) on the first pattern and aligning marks to apply a photoresist layer (15) on the second pattern materials (14) to expose the photoresist (15) selectively to remove the exposed portion of the photoresist; and irradiating a light onto the substrate to detect the coordinates of the aligning marks; thereby removing the error due to the applied condition of the photoresist and the refractive index.
申请公布号 KR920006747(B1) 申请公布日期 1992.08.17
申请号 KR19890017295 申请日期 1989.11.28
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 MUN, SUNG - CHAN
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
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