发明名称 |
LITHOGRAPHY PROCESS |
摘要 |
The lithography process method for improving the accuracy of super imposition comprises: applying first pattern materials (11) on a silicon substrate (10) to form a first patern on a chip (1); forming aligning marks on a cutting area (2) between the chips; applying second pattern materials (14) on the first pattern and aligning marks to apply a photoresist layer (15) on the second pattern materials (14) to expose the photoresist (15) selectively to remove the exposed portion of the photoresist; and irradiating a light onto the substrate to detect the coordinates of the aligning marks; thereby removing the error due to the applied condition of the photoresist and the refractive index.
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申请公布号 |
KR920006747(B1) |
申请公布日期 |
1992.08.17 |
申请号 |
KR19890017295 |
申请日期 |
1989.11.28 |
申请人 |
HYUNDAI ELECTRONICS CO., LTD. |
发明人 |
MUN, SUNG - CHAN |
分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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