| 摘要 |
In etching method for increasing surface area of aluminum foil by A.C. power source, the method is characterized by using A.C. power source with spherical and sin wave as an etching power source. In this method, the spherical wave source can be used as the first step etching source and sinosoidal wave one can be used as the second step etching source. Etching time of the first and second step etching are 30 sec-1 min and 3-5 mins, respectively. The etching proceeds at (+) region of sin wave and etch films is formed at (-) region, repeatedly. It has advantage of increasing number of corrosion initaiation point and electroststic capacity of aluminum due to increase of surface area.
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