发明名称 |
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摘要 |
PURPOSE:To easily establish the uniformity of beam intensity by obtaining the control value of a bias resistance or a bias voltage in accordance with a beam current under the condition that the intensity distribution and the luminance of an electron beam or beam dimensions are fixed. CONSTITUTION:An electron gun 1 is composed of an LaB monocrystal chip 1a and a Wenhnelt 1b which are arranged by opposing to a positive electrode 2. The electron gun 1 is energized by a high-voltage power source 3 and heated by a heater power source 4 to establish the bias by a resistance circuit 5. A current detector 6 detects an operating current IR. A gold narrow wire 24 and a Faraday cup 26 measuring the intensity distribution and the dimensions of an electron beam are provided at the position of a sample surface and an electron beam current is detected. A bias resistance is adjusted by detecting the beam current after applying deflecting scan to the electron beam and by calculating the optimum bias from a change in current. |
申请公布号 |
JPH0450732(B2) |
申请公布日期 |
1992.08.17 |
申请号 |
JP19800035834 |
申请日期 |
1980.03.21 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TAKIGAWA TADAHIRO;KATO YOSHIHIDE |
分类号 |
H01J37/04;H01J3/02;H01J37/06;H01J37/304;H01J37/305;H01L21/027 |
主分类号 |
H01J37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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