| 摘要 |
PURPOSE:To form an capacitive element which is not influenced by the transistor characteristic of a memory cell which constitutes a large capacity DRAM. CONSTITUTION:The method consists of a process of forming a first insulating film 26 on a semiconductor substrate 21, a process of forming a contact window 27 on the prescribed area of the first insulating film 26, a process of forming a second insulating film 28 on the first insulating film 26, a process of anisotropically etching the second insulating film 28 and leaving the second insulating film 28 on the side wall of the contact window 27, a process of forming a bottom electrode 29 on the left insulating film 28, a process of forming a dielectric film 30 on the electrode 29 and a process of forming a top electrode 31 on the film 30. |
