| 摘要 |
PURPOSE:To miniaturize it and improve frequency property and enable the control of temperature property by forming a dielectric film on one face of a semiinsulating Si substrate, and arranging a plurality of electrodes on this film, and forming an electrode all or partially over the other surface of the substrate. CONSTITUTION:A dielectric layer (5 in the figure) is made on a semiinsulating Si substrate 8. By arranging electrodes (1-4 in the figure) on this dielectric layer, a capacitor is made between the electrode and the substrate. To connect a terminal from this substrate, an electrode is made at the rear of this substrate. By taking the terminals shown by the equivalent circuit in the figure 2 out of these upper and lower electrodes, a capacitor array comprising four capacitors can be obtained. The property of the capacitor basically depends upon the property of the dielectric layer. For example, if the layer is SiO2, the permittivity is 4, but dielectric loss is small, and it has a high Q value, and the permittivity by temperature change is extremely small. |
