SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To simultaneously select the number of word lines which are more than that selected at an ordinary operation and to enhance the efficiency of a burn-in operation by a method wherein a desired voltage stress is exerted simultaneously on one selected part of a word-line group. CONSTITUTION:Transfer gates 1 to 4 are connected to a first word line WOm. A second word line WL1 is connected in series with a first word line WO1; in addition, transfer gates 5 to 8 are connected. A word-line selection circuit 20 which decodes addresses A0 to A1 is connected to gates at transfer gates 1 to 4. A word-line selection circuit 21 which decodes addresses A2 to An is connected to the transfer gates 5 to 8. The addresses A0 to A1 of the transfer gates 1 to 4 and the addresses A2 to An of the transfer gates 5 to 8 are controlled and screened. Thereby, it is possible to enhance the efficiency of a burn-in operation.