| 摘要 |
PURPOSE: To provide an etching end point detecting method and device, wherein formation of large end point detecting position in advance is not required. CONSTITUTION: A process for detecting an end point in etching process comprises a process wherein an etching structure in which at lest a first material layer covers a second material layer is provided, a process in which with the use of a coherent electromagnetic radiation beam 38, an opening part of the first material layer is etched to expose a part of the second material layer, a process in which the structure is exposed to an etching liquid for etching the second material layer, and a process in which the second material layer is monitored by using the etched opening part to detect an end point in etching process.
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