| 摘要 |
PURPOSE: To improve reliability by preventing a donor layer from oxidizing, in a field effect transistor structure provided with a base material, a channel layer of narrow band gap semiconductor material on the base substance, a donor layer of oxidizable wide-band gap semiconductor material, which is formed on the channel layer for formation of a heterojunction, a source provided on the donor, a drain and a gate. CONSTITUTION: A single uniform oxidization preventing layer 52 of non-oxidizing narrow band gap semiconductor material, which is placed below a source 60, a drain 62 and a gate 64 and extended while covering and sealing a donor layer 48, is provided. |
