| 摘要 |
PURPOSE: To provide a technique, in which a sidewall spacer is formed on emitter/gate contact effective to bipolar, CMOS, and BiCMOS transistors, etc., while local metal to metal connection is formed with reactive metals on the sidewall of selective base/source/drain contacts. CONSTITUTION: In a contact constitution for a semiconductor substrate comprising, along the surface of a semiconductor device, plural semiconductor regions 50, 52, 54, 56, 58, 60, 68, 70, 62, and 64 with each region comprising an upper part surface and at least one sidewall surface, a first part of the semiconductor region is a first conductive-type, while the second part of the semiconductor region is a second conductive type. A selective insulating spacer is formed along the sidewall of selective semiconductor regions 58, 60, 68, 70, 62, and 64 of the first conductive type, while on the sidewall of semiconductor regions 52, 54, and 56 of the second conductive type, fire resistant metals such as titanium, molybdenum, or tungsten, etc., is used for forming contacts. |
