| 摘要 |
PURPOSE:To provide a semiconductor device free of latch-up or crosstalk by forming an aluminum-base region extending vertically in isolation regions to connect a metalized wiring so that the impedance of isolation regions may be decreased. CONSTITUTION:A semiconductor device includes a doped substrate 4, on which active regions 2 and 3 and isolation regions 5 are formed. A metalized wiring is formed on the surface of the active regions or on the back surface of the substrate. An aluminum-base region 1 extends vertically in the isolation region 5, and it is connected to the metalized wiring. The isolation region 5 is formed, for example, by depositing n-type epitaxial layers 2 and 3 on the substrate 4 and implanting p-type impurity ions using an oxide mask formed on the substrate surface. A groove, reaching the substrate, is formed in the isolation region, and it is filled with aluminum by CVD. |
