PRODUCTION OF PHOTOMASK WITH PHASE SHIFT LAYER

摘要

PURPOSE:To prevent the strain of a pattern due to charge-up phenomenon and to obtain a phase shift reticle having high accuracy by forming an electrically conductive thin film on a thin resist film and then drawing a pattern in the resist film with ionized radiation. CONSTITUTION:A thin resist film 35 is formed on a substrate 31 with a formed phase shifter layer 34 for a photomask, a pattern is drawn in the film 35 with ionized radiation 37 and the film 35 is developed to form a resist pattern. At this time, in order to prevent charge-up, an electrically conductive thin film 36 is formed on the resist film 35 and then the pattern is drawn in the film 35 with the ionized radiation 37.