| 摘要 |
<p>PURPOSE:To provide a semiconductor device which can be operated at higher speed than convention, has higher reliability, lower parasitic resistance, and is hard to deteriorate in withstand voltage and its manufacture which can provide high yield by a relatively simple process. CONSTITUTION:In a semiconductor device where an insulating film 512 is provided with semiconductor layers 513, 514, 515 comprising source, drain regions 513, 514 and a channel region 515, and the semiconductor layers with a gate electrode 517 via a gate insulating film 516 is provided with semiconductor layers 513, 514, 515 including source, drain regions 513, 514, and a channel region 515 the thickness of the above-mentioned channel region 515 is smaller than those of the above-mentioned source, drain regions 523, 524, and the level of the interface 534 of the above-mentioned channel region and the above-mentioned insulating film is different from those of the interfaces 532, 535 of the source or drain region and the above-mentioned insulating film.</p> |
