| 摘要 |
PURPOSE:To regulate effectively the threshold voltage of an FET, by making the width of a gate wider at least on the drain side on the interface part of the device region and the field oxidized film than other parts. CONSTITUTION:A P<+> channel stopper and a field oxidized film are formed on P type Si substrate using Si3N4 mask, and a gate oxidized film 7 and a polycrystalline Si are stacked. A selective etching is made to form an opening thereto and As ions implantation is performed to form an N layer 9 and an SiO2 film 10 and a PSG11 are stacked thereon. An electrode window is formed on the N layer 9. After the end portions of the window is smoothed by glass flow, an Al electrode is formed. With such an arrangement, on the interface part of the N layer 10 and the field oxidized film the width of the gate electrode at least on the drain side is to be made wider than the other parts. Thus, the possible breakdown of the P-N junction part can be prevented and the electrons emittance can also be prevented, resulting in the stabilization of the threshold voltage. |
