| 摘要 |
PURPOSE: To prevent the destruction of a sensor system, and to manufacture a multilayer silicon structure in a relatively low temperature, by dipping silicon wafers in fuming nitric acid before overlapping them, washing them in deionized water, and specifying the processing temperature of the silicon wafer. CONSTITUTION: Surfaces 11 and 12 for connecting silicon wafers 10 and 20 are polished and cleaned. That is, the silicon wafers 10 and 20 are dipped in fuming nitride acid at a room temperature as the chemical pre-processing of the surfaces 11 and 12. Moreover, they are washed and dried in deionized water. Thus, adhesive effect between the both surfaces 11 and 12 is strengthened at the time of overlapping them. The overlapping is operated under a clean room condition. Rigid connection between the silicon wafers is generated at the time of a successive temperature processing. The temperature at that time is set 170 deg.C-400 deg.C. Thus, the silicon/silicon connection can be generated.
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