发明名称 |
VERFAHREN ZUM ERZEUGEN VON MONOKRISTALLINEN QUECKSILBER-CADMIUM-TELLURID-SCHICHTEN. |
摘要 |
Method of making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate (CS), performed inside a reactor (TQ) with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting to a specific thermal cycle a weighted tellurium quantity, a saturating cadmium telluride substrate (SS) and a mercury bath (BM). |
申请公布号 |
DE3872644(D1) |
申请公布日期 |
1992.08.13 |
申请号 |
DE19883872644 |
申请日期 |
1988.10.05 |
申请人 |
SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.P.A., BACOLI, NEAPEL/NAPOLI, IT |
发明人 |
BERNARDI, SERGIO, TORINO, IT |
分类号 |
C30B19/00;C30B19/04;C30B29/48;H01L21/368 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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