| 摘要 |
PURPOSE:To make an enzyme sensor small in size and to make it be of high speed by utilizing a technique of processing a semiconductor. CONSTITUTION:A laminate film made up of a trifluorolanthanum (LaF3) film 23 and a platinum electrode film 24 and a glucose oxidase fixation film 26 are formed sequentially on a gate of a semiconductor silicon substrate 21, so that a MOS diode structure be formed. A sensor thus prepared being used as a working electrode, a change in capacitance of a MOS diode, that is, an electromotive force generated by the reaction of a hydrogen peroxide produced by the existence of glucose oxidase, with trifluorolanthanum, is measured between the platinum electrode film 24 and an electrode (aluminum plate 27) on the rear side, and thereby the concentration of glucose is detected. For detection of a surface potential, a surface potential detecting method based on the principle of a field effect transistor and a C(capacity)-V(voltage) characteristic can be utilized. |
