High tension wave-trap diode.

摘要

The high tension wave-trap diode is characterised in that it consists of an alternating stack of semiconductor wafers (11) and conductive washers (12) centred one above the other with the aid of insulating centering rings (14) placed on the individual wafers and pressed together between conductive sole plates (17, 18) of a pressurised leaktight casing (15) with tubular insulating wall (16) and in which the said stack is mounted. Application: circuit for high-energy pulse discharge in an element to be tested.