发明名称 |
Method of manufacturing a thin film transistor using positive and negative photoresists |
摘要 |
A self-aligned TFT array for liquid crystal display devices and a method of manufacturing the array are disclosed. A protective insulating layer on a semiconductor layer is exactly aligned with a gate electrode. A self-alignment method is used for patterning the protective insulating layer and an impurity-doped semiconductor layer on the semiconductor layer. No lift-off process is necessary.
|
申请公布号 |
US5137841(A) |
申请公布日期 |
1992.08.11 |
申请号 |
US19890454990 |
申请日期 |
1989.12.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKEDA, MAMORU;YAMASHITA, ICHIRO;KITAHIRO, ISAMU |
分类号 |
G02F1/1368;H01L29/45;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|