发明名称 Method of manufacturing a thin film transistor using positive and negative photoresists
摘要 A self-aligned TFT array for liquid crystal display devices and a method of manufacturing the array are disclosed. A protective insulating layer on a semiconductor layer is exactly aligned with a gate electrode. A self-alignment method is used for patterning the protective insulating layer and an impurity-doped semiconductor layer on the semiconductor layer. No lift-off process is necessary.
申请公布号 US5137841(A) 申请公布日期 1992.08.11
申请号 US19890454990 申请日期 1989.12.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TAKEDA, MAMORU;YAMASHITA, ICHIRO;KITAHIRO, ISAMU
分类号 G02F1/1368;H01L29/45;H01L29/786 主分类号 G02F1/1368
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