发明名称 |
THIN-FILM TRANSISTOR |
摘要 |
There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier. |
申请公布号 |
CA1306145(C) |
申请公布日期 |
1992.08.11 |
申请号 |
CA19860526325 |
申请日期 |
1986.12.24 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ISHIHARA, SHUNICHI;OOTOSHI, HIROKAZU;HIROOKA, MASAAKI;HANNA, JUNICHI;SHIMIZU, ISAMU |
分类号 |
H01L27/12;H01L21/205;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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