发明名称 |
METAL EPITAXIAL GROWTH METHOD AND METAL-METAL STRUCTURE |
摘要 |
Metal film and metal superlattice structures with controlled orientations are grown at room temperature using a silicon or germanium substrate (12) coated with an epitaxially grown copper layer (10). The metal films (14) are preferably deposited by electron beam evaporation without external heating of the copper coated substrate (12). <IMAGE> |
申请公布号 |
JPH04221058(A) |
申请公布日期 |
1992.08.11 |
申请号 |
JP19910070311 |
申请日期 |
1991.03.12 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
CHIN AN CHIYAN |
分类号 |
C23C14/14;C30B23/02;C30B23/08;C30B25/02;C30B25/18;C30B29/06;H01L21/205 |
主分类号 |
C23C14/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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