发明名称 |
TRANSISTOR MADE OF 3-5 GROUP SEMICONDUCTOR MATERIALS ON A SILICON SUBSTRATE |
摘要 |
The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.
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申请公布号 |
US5138407(A) |
申请公布日期 |
1992.08.11 |
申请号 |
US19900622822 |
申请日期 |
1990.12.05 |
申请人 |
THOMSON - CSF |
发明人 |
HIRTZ, JEAN-PIERRE;CHARASSE, MARIE-NOEELLE;PACOU, THIERRY;BOSELLA, ALAIN;BRIERE, PIERRE |
分类号 |
H01L21/302;H01L21/20;H01L21/203;H01L21/205;H01L21/3065;H01L21/338;H01L21/74;H01L23/36;H01L29/267;H01L29/417;H01L29/45;H01L29/812 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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