| 摘要 |
PURPOSE:To obtain an output whose efficiency is high in a wavelength from an orange color to a yellow-green color by a method wherein InGaP as a direct- transition type crystal is used for a light-emitting layer. CONSTITUTION:A composition grade layer by InGaP at a composition change rate of 7%/mum is epitaxially grown on an n-type GaP substrate 1 by a hydride VPE method. In addition, an n-type In1-xGaxP definite composition layer 3 is epitaxially grown on it by a hydride VPE method. Then, p-type impurities such as zinc or the like are diffused form the surface of the n-type In1-xGaxP definite composition layer 3; p-type In1-xGaxP 4 is formed; a p-n junction is formed. In addition, electrodes 5, 6 are formed respectively on the surface of the p-type In1-xGaxP 4 and on the rear of the GaP substrate 1. Thereby, it is possible to obtain a high-efficiency output over a wide range form red to yellow-green. |
