发明名称 SURFACE PROCESSING METHOD AND ITS DEVICE
摘要 PURPOSE:To make etching work simple and prompt by finishing an etching work merely through the transfer of a wafer to an adjoining pure water lane with the help of a wafer transfer loader with regard to the etching of an electrode metal, etc. of a semiconductor wafer using an inclined plane. CONSTITUTION:An etching device body 2, an etching solution recovery tank, a three-stage water wash tank, etc. are contained in a draft. First, the device is placed in an operating condition and lenses 12A, 12C, 12E are placed in a condition where an etching solution is caused to flow down continuously and lanes 12B, 12D, 12F also in a condition where pure water is caused to flow down continuously. Next, a wafer transfer loader 14Aa, etc. are set in a neutral position and a wafer is immersed in an etching solution. Then the etching solution flows on the wafer to perform an etching. For instance, the etching process termination is warned at the lighting of an indicator lamp 15Aa and then an operator lifts up a wafer W1, setting it at lane 12B where pure water flows down. In this way, the etching work can be performed quickly and simply.
申请公布号 JPS56120131(A) 申请公布日期 1981.09.21
申请号 JP19800022762 申请日期 1980.02.27
申请人 HITACHI LTD 发明人 SASAKI TAMOTSU
分类号 H01L21/306;C23F1/08 主分类号 H01L21/306
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