发明名称 PLATING APPARATUS OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce an irregularity in a plating thickness due to the difference in places at a cathode part by a method wherein a plurality of anodes are provided and circuits connecting the individual anodes to a power-supply device are controlled so as to be turned on and off for an arbitrary time via a timer. CONSTITUTION:For an anode structure, a lead frame 6 for semiconductor devices 5 is put on a plurality of jigs and is connected to a cathode rod 4 and outer leads at the lead frame 6 are electroplated. One central anode 2a out of a plurality of anodes 2 is connected to an independent anode rod 3a, and two other anodes 2b are connected to another anode rod 3b. Circuits from the individual anode rods to a rectifier 9 are independent, and a timer 9 used to control the circuits so as to be turned on and off is situated between the anode rod 3b and the rectifier 8. For example, when a plating operation is executed, the circuit connected to the anode at the end is turned off timely by using the timer 9 and is plated. Then, the plated thickness at the end part can be controlled so as to be low.
申请公布号 JPH04219963(A) 申请公布日期 1992.08.11
申请号 JP19900404040 申请日期 1990.12.20
申请人 NEC KYUSHU LTD 发明人 MATSUDA MOTOAKI
分类号 C25D7/00;C25D7/12;H01L23/50 主分类号 C25D7/00
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