| 摘要 |
<p>PURPOSE:To reduce the continuity between an upper conducting layer and a lower conducting layer by way of a weak point by forming a metal oxide section on a weak point section on an intermediate layer. CONSTITUTION:There is formed a metal thin film, which uses aluminum or niobium, on an insulation substrate 11. This thin metal film is selectively removed so as to form a first conducting layer 12. Based on the application of a plasma CVD process, an insulation layer, such as silicon nitride or a high resistor semiconductor layer, such as amorphous silicon carbide thin film is formed on the whole surface. The layer is selectively removed so as to form an island-like intermediate layer 13. Based on a wet anode oxidation process, the first conducting layer 12 is anode-oxidized, thereby forming a metal oxide section 14 on a weak point section 13a on the intermediate layer 13. A transparent conducting layer, such as ITO is formed on the whole surface and selectively removed, thereby forming a second conducting layer 15.</p> |
