| 摘要 |
The invention relates to oxide breakdown MOS fuses. It consists in using an MOS transistor (T) the gate (G) and the source (S) of which form an MOS capacitor (C) which is then put in parallel with the gate-source circuit of the transistor. A tunnel window (F) situated between the gate and the source makes it possible more easily to break down the cell. When the cell is broken down, it behaves like a low-value resistor. It makes it possible to produce fuses which are easy to break down irreversibly. <IMAGE>
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