发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To provide a radiation resist excellent in resolution and with high sensitivity by using a mixture of polymer composed of methacrylic acid ethoxyethyl and photocopolymerization starting agent which generates acid with light. CONSTITUTION:A substrate is coated with a mixture of polymer composed of methacryl acid ethoxyethyl expressed by the general formula, and a photocopolymerization starting agent generating acid with light, and dried to provide a resist film having high transmissive property. After the resist film is irradiated selectively with radiation, it is heated, and developped with alkali developper, thus providing sub-micro patterns with high definition.
申请公布号 JPH04215661(A) 申请公布日期 1992.08.06
申请号 JP19900402130 申请日期 1990.12.14
申请人 FUJITSU LTD 发明人 NOZAKI KOJI;NAKAMURA HIROKO
分类号 G03F7/004;G03F7/027;G03F7/029;G03F7/031;G03F7/039;G03F7/20;G03F7/30;H01L21/02;H01L21/027 主分类号 G03F7/004
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