Deep depletion detector diode with simplified operating requirements - has high resistivity bulk with implanted regions and features backside etched depression allowing low voltage operation and direct coupling to emitter

摘要

A detector diode for operation in full depletion for use as a space charge region consists of a monolithic structure in a single crystalline material, such as (100) high ohmic Si. The device is a diode in which by micromechanical etching a depression has been formed in the surface opposite the surface to which the connections are made. The diode features both an implanted p(+)- and an n(+)-region, which are used respectively as cathode and anode. The depression formed into the backside of the detector can be placed directly on or over the emission source or scintillator. USE/ADVANTAGE - The "drift chamber" diode can be operated at lower bias levels due to the presence of the depression. By having both contacts on the top side the diode can be easier connected to other equipment. The diode can be placed directly over the source of the radiation or the scintillator. The mfg. process requires only standard process technology. The device is used as a detector of nuclear particle and photon emission.