发明名称 PRODUCTION OF MASK FOR EXPOSURE
摘要 <p>PURPOSE:To pattern a shielding film into specified dimension in good accuracy. CONSTITUTION:Tungsten 6 as a X-ray absorbing film (shielding film) is provided not only on the surface of a film 2 being a X-ray transmitting substrate but on the whole surface of the substrate. A resist pattern 7 is formed on the tungsten film 6 while GND potential is applied on the tungsten 6. Thereby, charges accumulating in the resist pattern 7 are discharged through the tungsten 6. Thereby, the resist pattern 7 is free from displacement or deformation due to accumulation of charges, so that the tungsten 6 can be patterned into specified dimension in good accuracy when the tungsten 6 is etched with using the resist pattern 7 as a mask.</p>
申请公布号 JPH04216550(A) 申请公布日期 1992.08.06
申请号 JP19900403138 申请日期 1990.12.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUJIWARA KEIJI
分类号 G03F1/22;G03F1/68;H01L21/027;H01L21/30 主分类号 G03F1/22
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