| 发明名称 |
Semiconductor device for high voltage application and method of making the same. |
| 摘要 |
<p>The present invention involves the structure of a high voltage, thin film semiconductor device and method for making such device. In particular, the present invention sets forth such a structure and technique for making this structure in which a specific doping density profile is provided in the structure. According to the invention this doping profile is linear and enables significantly increased breakdown voltages to be achieve. <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP0497427(A2) |
申请公布日期 |
1992.08.05 |
| 申请号 |
EP19920200252 |
申请日期 |
1992.01.29 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
MERCHANT, STEVEN;ARNOLD, EMILE |
| 分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/423;H01L29/739;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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