| 摘要 |
<p>PURPOSE:To enable the determination of energy band structure parameter in the minute area of semiconductor material by specifying the radiation condition of spectral beam pulses and excitation beam pulses for measuring reflection spectrum. CONSTITUTION:Optical beams from excitation light source are made into excitation optical beam pulses 3 by a light chopper 2, whereas beams from white light source 5 are made into spectral beams 7 by a spectroscope 6, and the spectral beams 7 are made into spectral beam pulses 9 by the light chopper 8 to radiate a sample 4. A light chopper 2 is operated synchronously with the light chopper 8, and the cycles T1, T2 and pulse width t1, t2 of the spectral beam pulses 9 and excitation beam pulses 3 are adjusted to be T2=2.T1 and t1<t2<T1. The reflected beam pulses 10, reflected from the sample 4, of the spectral beam pulses 9 are received by a light detector 11, and the output signals thereof are measured by a boxcar integrator 12 with the timing signal of the light chopper 2 as a trigger signal.</p> |
