| 摘要 |
PURPOSE:To obtain high optical output and a sufficient ohmic contact between a P-type GaAlAs clad layer 1 and P-side electrode 5 in a double hetero- structured light emitting diode which employs GaAlAs layers. CONSTITUTION:First, a P-type GaAlAs clad layer 1 is formed. Then, a P-type GaAlAs active layer 2 is deposited on the layer 1 and an N-type GaAlAs clad layer 3 is deposited on the layer 2. The impurity density of the P-type GaAlAs clad layer 1 near the boundary between the layer 1 and the P-type GaAlAs active layer 2 is set to 1-8X10<17>cm<-3> or lower and that of the P-type GaAlAs active layer 2 is set to 1-8X10<18>cm<-3> and that of the N-type GaAlAs clad layer 3 is set to 0.5-5X10<17>cm<-3>. In the P-type GaAlAs clad layer 1 except for a part near the boundary or on the rear surface of the P-type GaAlAs clad layer 1, a P<+>-type GaAlAs layer 6 is formed which has the impurity density of 1X10<18>cm<-3> or above. |
