发明名称 THIN FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To attain a structure for preventing the discontinuity of a drain bus in a manufacturing process to improve the yield. CONSTITUTION:A thin film transistor matrix consists of a drain electrode 8 and a drain bus 9 on a substrate 1. The drain bus 9 is connected to the drain electrode 8. At that connection, the drain bus 9 overlaps the drain electrode 8 in the longitudinal direction of the drain bus 9 leaving a part of the drain bus 9 not overlapping in the right-angled direction. The structure is such that an angle between the periphery of the drain electrode 8 defining the overlapped area of the drain electrode 8 and the drain bus 9 and the periphery of the drain bus 9 is the acute one.</p>
申请公布号 JPH04214537(A) 申请公布日期 1992.08.05
申请号 JP19900401500 申请日期 1990.12.12
申请人 FUJITSU LTD 发明人 NASU YASUHIRO;WATABE JUNICHI;MATSUMOTO TOMOTAKA
分类号 G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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