发明名称 |
THIN FILM TRANSISTOR MATRIX |
摘要 |
<p>PURPOSE:To attain a structure for preventing the discontinuity of a drain bus in a manufacturing process to improve the yield. CONSTITUTION:A thin film transistor matrix consists of a drain electrode 8 and a drain bus 9 on a substrate 1. The drain bus 9 is connected to the drain electrode 8. At that connection, the drain bus 9 overlaps the drain electrode 8 in the longitudinal direction of the drain bus 9 leaving a part of the drain bus 9 not overlapping in the right-angled direction. The structure is such that an angle between the periphery of the drain electrode 8 defining the overlapped area of the drain electrode 8 and the drain bus 9 and the periphery of the drain bus 9 is the acute one.</p> |
申请公布号 |
JPH04214537(A) |
申请公布日期 |
1992.08.05 |
申请号 |
JP19900401500 |
申请日期 |
1990.12.12 |
申请人 |
FUJITSU LTD |
发明人 |
NASU YASUHIRO;WATABE JUNICHI;MATSUMOTO TOMOTAKA |
分类号 |
G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|