| 摘要 |
<p>A node potential V1 which is obtained by the division of an internal reference potential (VREF) and a substrate potential (VBB) and another node potential V2 which is obtained by the division of the internal reference potential (VREF) and the ground potential (GND) are compared with each other by a current-mirror amplifier (100). The initial setting (VBB = GND) of the above two node potentials (V1 and V2) is made as V1 > V2. When the substrate potential (VBB) becomes large in its absolute value, the node potential V1 falls following such change and, when it reaches a predetermined substrate potential, the potentials result in V1 < V2. Then, a true output node (N11) of the current-mirror amplifier outputs an output of a largely inverted output level which is further amplified by at least one inverter (I1 through In). The semiconductor integrated circuit device is capable of detecting the predetermined substrate potential even if there exist variations in the threshold values in MOS transistors concerned in the fabricating process. <IMAGE></p> |
