发明名称 NANOFABRICATED STRUCTURES
摘要 A method of forming a nano-scale device with a probe (2) such as a STM on a substrate (1) includes the step of rendering the relevant part of the substrate conductive whilst the device (5) is being formed with the probe so that current can flow from the probe to the substrate. Thereafter, to operate the device, the substrate is rendered non-conductive so as to prevent dissipation of current from the device through the substrate. The substrate can be altered in conductivity by cooling to undergo a Mott transition, can be heated from a normally non-conductive condition to become conductive, or subject to laser radiation to induce charge carriers to render it conductive. <IMAGE>
申请公布号 GB9213423(D0) 申请公布日期 1992.08.05
申请号 GB19920013423 申请日期 1992.06.24
申请人 HITACHI EUROPE LIMITED 发明人
分类号 B82B1/00;B82B3/00;G01Q80/00;G11B9/00;H01J37/30;H01L21/28;H01L29/76;H01L49/00 主分类号 B82B1/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利