| 摘要 |
<p>A capacitive structure (10) includes a length of a plurality of first layers (12) defining a first group and a length of a plurality of second layers (14) defining a second group. Each of the first (12) and second (14) layers have opposed first (24,26) and second edges (28,30). Each of the first layers includes a first dielectric substrate (16) and a first metallic film (18). The first metallic film (18) extends from the first edge (24) of the first layers toward the second edge (26). Each of the second layers includes a second dielectric substrate (20) and a second metallic film (22). The second metallic film extends from the second edge (30) of the second layer toward the first edge (28). The first metallic film (18) includes a first relatively narrow metal-free zone (32) spaced from the second edge (26) to form a first marginal metal film band (34) at the second edge (26). The first metallic film (18) further includes a first metal-free margin lane (36) arranged between the metal-free zone (32) and the first edge (24) to divide the first metallic film (18) into first and second segments (18a,18b). The second metallic film (22) includes a second relatively narrow metal-free zone (38) spaced from the first edge (28) to form a second marginal metal film band (40) at the first edge (28). The second metallic film (22) further includes a.second metal-free margin lane (42) arranged between the second metal-free zone (38) and the second edge (22) to divide the second metallic film (22) into third and fourth segments (22a,22b). <IMAGE></p> |
